SiT5811AC-KY033IV-10.000000

12-Hour Holdover in real world conditions for 2x better service continuity

• ±0.1  ppb/day aging 
• Inclusive of an 8°C temperature change with ITU-T recommended profile and 1 m/s airflow

Exceptional dynamic stability under airflow, fast temp. ramp

• ±1 ppb over-temp. stability from -40 to 95°C 
• ±0.01 ppb/°C frequency slope (ΔF/ΔT) -- Ensures system-level quality of service for telecom and networking equipment in hostile environments
• 4E-12 HDEV at 10 second averaging time

3x lower power and 25x less volume for compact edge and datacenter devices

• 420 mW typical power consumption (3.3V)
• Robust 9.0 x 7.0 x 3.6 mm package

Best phase noise under vibration

• Minimizes call and/or link drops in high-vibration environments

No activity dips or microjumps

• Eliminates any need for costly screening or burn-in tests

On-chip power-supply noise filtering for excellent PSNR

• Reduces BOM by eliminating a dedicated LDO for OCXO

LVCMOS or clipped sinewave output

• Optimizes for best balance between EMI and jitter

Rich programmable features

• Any frequency between 10 to 60 MHz
• 2.5, 2.8, and 3.3V power supply options 

Digital frequency tuning through I2C and SPI

• Large pull range from ±3.125 to ±400 ppm
• 5E-14 frequency pull resolution
• Eliminate frequency shift caused by board noise

Superior reliability – reduces field failures and repair costs due to clock components

• 1 billion hours MTBF
• Lifetime warranty