SiT8209 是一款适用于电信、网络、存储和无线应用的高频高性能振荡器。它是业界首款在所有温度范围内提供 500 飞秒典型集成 RMS 相位抖动（12 kHz 至 20 MHz）和 ±10 ppm 频率稳定性的 MEMS 振荡器。该设备具有丰富的可配置功能，例如 80 至 220 MHz 之间的任何频率，并且交货时间极短，可确保快速上市。借助用于降低 EMI 的 FlexEdge™ 技术，SiT8209 可提高系统性能。SiT8209 的布局与传统石英、SAW 和泛音振荡器兼容，无需更改电路板即可替换这些设备。
Don’t waste time shipping samples. Request demo & test parts remotely in our lab and qualify for your design today.
我们随时准备为您提供帮助！
请填写下面的表格，会有人与您联系。 标有 的项目 * 是必要的。
| "眼镜" | "值" |
|---|---|
| Frequency | 80 to 220 MHz |
| Frequency Stability (ppm) | ±10, ±20, ±25, ±50 |
| Operating Temperature Range (°C) | -20 to +70, -40 to +85 |
| Package Type (mm²) | 2.5x2.0, 3.2x2.5, 5.0x3.2, 7.0x5.0 |
| Oscillator Type | XO-SE |
| Phase Jitter (rms) | 0.5 ps |
| FlexEdgeTM Rise/Fall Time | Yes |
| Voltage Supply (V) | 1.8, 2.5 to 3.3 |
| Features | Field programmable, Low jitter |
| Availability | Production |
-
Image: SiT8209 4-pin package, top & bottom
-
SiT8209 pin assignments
-
Phase Noise, 156.25 MHz, 3.3V, LVCMOS Output
-
Configurable FlexEdge drive strength reduces EMI by slowing rise/fall time – for example the 11th clock harmonic is reduced by 35 dB by increasing the rise/fall edge from 5% to 45% of the period
<1 ps RMS 积分相位抖动（12 kHz 至 20 MHz）
- 为最严格的应用（如 SONET）提供出色的抖动裕度
出色的频率稳定性，低至±10 ppm
- 更好的时序裕度可增强系统稳定性和稳健性
广泛的可编程性
- 频率从 80.000001 到 220
- 电源电压 1.8 V；2.5 V 至 3.3 V
- 频率稳定性从 ±10 ppm 到 ±50 ppm
- 定制规格以实现最佳系统性能
- 轻松获得操作范围内的任何设备规格
使用 FlexEdge 技术可配置驱动强度
- 较慢的上升/下降时间可最大程度地减少振荡器的 EMI
- 通过驱动多个负载并消除额外的定时组件来节省成本
三个行业标准软件包
- 100% 直接替代石英VCXO，无需任何设计更改
4 至 6 周的准备时间
- 减少库存开销
- 缓解短缺风险
- 计算机服务器
- 数据中心
- 突袭控制器
- 路由器
- 开关
- 电信设备
- SATA/SAS
- 光纤通道
- 索内特
- 10G以太网
- DDR
- SiT8209 (3.3 V E) IBIS Model
- SiT8209 (3.3 V R) IBIS Model
- SiT8209 (3.3 V S) IBIS Model
- SiT8209 (3.3 V D) IBIS Model
- SiT8209 (3.3 V Q) IBIS Model
- SiT8209 (3.3 V P) IBIS Model
- SiT8209 (3.3 V G) IBIS Model
- SiT8209 (3.3 V T) IBIS Model
- SiT8209 (3.3 V DFLT) IBIS Model
- SiT8209 (3.3 V B) IBIS Model
- SiT8209 (3.3 V U) IBIS Model
- SiT8209 (3.3 V W) IBIS Model
- SiT8209 (3.3 V A) IBIS Model
- SiT8209 (3.3 V L) IBIS Model
- SiT8209 (3.3 V M) IBIS Model
- SiT8209 (3.3 V Z) IBIS Model
- SiT8209 (3.3 V X) IBIS Model
- SiT8209 (3.3 V N) IBIS Model
- SiT8209 (3.3 V Y) IBIS Model
- SiT8209 (3.3 V K) IBIS Model
- SiT8209 (1.8 V K) IBIS Model
- SiT8209 (1.8 V M) IBIS Model
- SiT8209 (1.8 V L) IBIS Model
- SiT8209 (1.8 V Y) IBIS Model
- SiT8209 (1.8 V N) IBIS Model
- SiT8209 (1.8 V X) IBIS Model
- SiT8209 (1.8 V DFLT) IBIS Model
- SiT8209 (1.8 V U) IBIS Model
- SiT8209 (1.8 V B) IBIS Model
- SiT8209 (1.8 V T) IBIS Model
- SiT8209 (1.8 V A) IBIS Model
- SiT8209 (1.8 V W) IBIS Model
- SiT8209 (1.8 V D) IBIS Model
- SiT8209 (1.8 V S) IBIS Model
- SiT8209 (1.8 V R) IBIS Model
- SiT8209 (1.8 V E) IBIS Model
- SiT8209 (1.8 V G) IBIS Model
- SiT8209 (1.8 V P) IBIS Model
- SiT8209 (1.8 V Q) IBIS Model
- SiT8209 (1.8 V F) IBIS Model
- SiT8209 (2.8 V K) IBIS Model
- SiT8209 (2.8 V Y) IBIS Model
- SiT8209 (2.8 V N) IBIS Model
- SiT8209 (2.8 V X) IBIS Model
- SiT8209 (2.8 V Z) IBIS Model
- SiT8209 (2.8 V M) IBIS Model
- SiT8209 (2.8 V L) IBIS Model
- SiT8209 (2.8 V A) IBIS Model
- SiT8209 (2.8 V W) IBIS Model
- SiT8209 (2.8 V U) IBIS Model
- SiT8209 (2.8 V B) IBIS Model
- SiT8209 (2.8 V DFLT) IBIS Model
- SiT8209 (2.8 V T) IBIS Model
- SiT8209 (2.8 V P) IBIS Model
- SiT8209 (2.8 V Q) IBIS Model
- SiT8209 (2.8 V F) IBIS Model
- SiT8209 (2.8 V D) IBIS Model
- SiT8209 (2.8 V S) IBIS Model
- SiT8209 (2.8 V R) IBIS Model
- SiT8209 (2.8 V E) IBIS Model
- SiT8209 (2.5 V F) IBIS Model
- SiT8209 (2.5 V Q) IBIS Model
- SiT8209 (2.5 V P) IBIS Model
- SiT8209 (2.5 V E) IBIS Model
- SiT8209 (2.5 V R) IBIS Model
- SiT8209 (2.5 V S) IBIS Model
- SiT8209 (2.5 V D) IBIS Model
- SiT8209 (2.5 V W) IBIS Model
- SiT8209 (2.5 V A) IBIS Model
- SiT8209 (2.5 V T) IBIS Model
- SiT8209 (2.5 V B) IBIS Model
- SiT8209 (2.5 V U) IBIS Model
- SiT8209 (2.5 V X) IBIS Model
- SiT8209 (2.5 V N) IBIS Model
- SiT8209 (2.5 V Y) IBIS Model
- SiT8209 (2.5 V L) IBIS Model
- SiT8209 (2.5 V M) IBIS Model
- SiT8209 (2.5 V Z) IBIS Model
- SiT8209 (2.5 V DFLT) IBIS Model
- SiT8209 (2.5 V K) IBIS Model
评估板 (联系 SiTime ) – SiT6081 (2520) | SiT6082 (3225) | SiT6083 (5032) | SiT6084 (7050)
频率斜率 (dF/dT) 计算器 – 计算频率随温度变化的斜率
抖动计算器和图表 – 将相位噪声转换为相位抖动，找到相位噪声图
Time Machine II 编程器– 编程频率、电压、稳定性等
2724 4 引脚| 3225 4 引脚| 5032 4 引脚| 7050 4 引脚– 预览带 QFN 3D 步进模型的封装
Apply Filters
| Resource Name | Resource Type | Date | Format | Size |
|---|
Step 1: Enter or Configure SiT8209 Part Number
Step 2. Purchase
Quantity
| Qty: | Unit Price | Total |
|---|---|---|
| --- | --- | --- |
| Quantity | Unit Price | |
|---|---|---|
| 199 | --- | |
| 100-499 | --- | |
| 500-999 | --- | |
| 1,000-4,999 | --- | |
| > 4,999 | --- |