高温振荡器
SiTime 的汽车级 (AEC-Q100) 和高温振荡器在 -55 °C 至 125 °C 的温度下可提供 ±20 ppm 的频率稳定性。与石英相比，它们的稳定性提高了两倍，可靠性提高了 20 倍，抗冲击和振动能力提高了 30 倍。
- 1 至 725 MHz，精度为小数点后 6 位
- 军用温度（-55 至 125 °C）、汽车温度（-40 至 125 °C）、扩展工业温度（-40 至 105 °C）
- 低振动灵敏度（g 灵敏度）为 0.1 ppb/g
- 抗冲击能力：50,000 g；抗振动能力：70 g
- 平均无故障时间 (MTBF) 22 亿小时
| 器件 | 产品说明书 | 立即购买 | 频率 | 精度(ppm) | 输出类型 | 供电电压(V) | 温度范围(°C) | 封装尺寸(mm) |
|---|---|---|---|---|---|---|---|---|
| SiT2024 |
|
1 to 110 MHz | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -40 to 85 (Gr. 3) -40 to 105 (Gr. 2) -40 to 125 (Gr. 1) -55 to 125 (Ext. Cold Gr. 1) | SOT23 (2.9x2.8) | |
| SiT2025 |
|
115 to 137 MHz | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -40 to 85 (Gr. 3) -40 to 105 (Gr. 2) -40 to 125 (Gr. 1) -55 to 125 (Ext. Cold Gr. 1) | SOT23 (2.9x2.8) | |
| SiT8918 |
|
1 to 110 MHz | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -40 to +105 -40 to +125 | 2.0x1.6 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0 | |
| SiT8919 |
|
115 to 137 MHz | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -40 to +105 -40 to +125 | 2.0x1.6 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0 | |
| SiT8920 |
|
1 to 110 MHz | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -55 to +125 | 2.0x1.6 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0 | |
| SiT8921 |
|
119 to 137 MHz | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -55 to +125 | 2.0x1.6 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0 | |
| SiT8924 |
|
1 to 110 MHz | ±20 ±25 ±30 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -40 to +85 -40 to +105 -40 to +125 -55 to +125 | 2.0x1.6 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0 | |
| SiT8925 |
|
115 to 137 MHz | ±20 ±25 ±30 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -40 to +85 -40 to +105 -40 to +125 -55 to +125 | 2.0x1.6 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0 | |
| SiT9386 |
|
1 to 220 MHz | ±20 ±25 ±50 | LVPECL LVDS HCSL | 2.5 2.8 3.0 3.3 | -40 to 85 (Gr. 3) -40 to 105 (Gr. 2) | 3.2x2.5 7.0x5.0 | |
| SiT9387 |
|
220 to 725 MHz | ±20 ±25 ±50 | LVPECL LVDS HCSL | 2.5 2.8 3.0 3.3 | -40 to 85 (Gr. 3) -40 to 105 (Gr. 2) | 3.2x2.5 7.0x5.0 | |
| SiT9025 |
|
1 to 150 MHz | ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -40 to 85 (Gr. 3) -40 to 105 (Gr. 2) -40 to 125 (Gr. 1) -55 to 125 (Ext. Cold Gr. 1) | 2.0x1.6 mm 2.5x2.0 mm 3.2x2.5 mm | |
| SiT9396 |
|
1 to 220 MHz | ±25 (105ºC) ±30 (125ºC) ±50 (125ºC) | LVPECL LVDS HCSL Low-power HCSL FlexSwing | 1.8 2.5 3.3 2.25 to 3.63 1.71 to 3.63 | -40 to +85 -40 to +105 -40 to +125 | 2.0 x 1.6 2.5 x 2.0 3.2 x 2.5 | |
| SiT9397 |
|
220 to 920 MHz | ±25 (105ºC) ±30 (125ºC) ±50 (125ºC) | LVPECL LVDS HCSL Low-power HCSL FlexSwing | 1.8 2.5 3.3 2.25 to 3.63 1.71 to 3.63 | -40 to +85 -40 to +105 -40 to +125 | 2.0 x 1.6 2.5 x 2.0 3.2 x 2.5 | |
| SiT1625 |
|
44 standard frequencies | ±25 ppm (85ºC) ±30 (105ºC) ±50 (125ºC) | LVCMOS | 1.5 ±10% 1.8 ±10% 2.5 ±10% 3.3 ±10% 1.62 to 3.63 *1.2 ±5% | -40 to 85 (Gr.3) -40 to 105 (Gr.2) -40 to 125 (Gr.1) | 1.6x1.2 2.0x1.6 2.5x2.0 3.2x2.5 | |
| SiT1618 |
|
33 standard frequencies | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -40 to +105 -40 to +125 | 2.0x1.6 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0 | |
| SiT2018 |
|
1 to 110 MHz | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -40 to +105 -40 to +125 | SOT23 (2.9x2.8) | |
| SiT2019 |
|
115 to 137 MHz | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -40 to +105 -40 to +125 | SOT23 (2.9x2.8) | |
| SiT2020 |
|
1 to 110 MHz | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -55 to +125 | SOT23 (2.9x2.8) | |
| SiT2021 |
|
119 to 137 MHz | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -55 to +125 | SOT23 (2.9x2.8) |