SiT5543AI-WW-33N0A60.000000

Exceptional dynamic stability under airflow, fast temp. ramp

• ±5 ppb over-temp. stability from -40°C to 95°C 
• ±0.3 ppb/°C frequency slope (ΔF/ΔT), 10°C/min ramp, ensures performance under fast temp. transients
• ±150 ppb 20-year aging, 16x better than quartz, eliminates in-factory calibration required with less stable devices
• 1.5e-11 ADEV at 10 second averaging time

40% smaller and 2x lower power than comparable OCXOs

• 110 mW typical power consumption (2.5V)
• Robust 7.0 mm x 5.0 mm ceramic package, insensitive to board bending stress, reducing PCB layout constraints
• Ideal for replacing larger power-hungry quartz OCXOs 

Better acceleration sensitivity and 20x better phase noise under vibration

• 0.01 ppb/g g-sensitivity, per IAW MIL-PRF-55310 section 4.18.8.3.1
• Minimizes packet loss in high-vibration environments

No activity dips or microjumps

• Eliminates any need for costly screening or burn-in tests

0.2 ps/mV power supply noise rejection (PSNR)

• Reduces BOM by eliminating a dedicated LDO for TCXO

LVCMOS or clipped sinewave output

• Optimize for best balance between EMI and jitter

Programmable features

• Any frequency between 1 to 60 MHz
• 2.25 to 3.63 V
• Wide pull range

Digital frequency tuning through I2C

• Digital control eliminates frequency shift caused by board noise
• No frequency-pull non-linearity, improves dynamic performance in closed-loop applications
• 5 ppt resolution minimizes time error in synch applications
• ±6.25 to ±3200 ppm range provides designers flexibility and optimal system performance

Superior reliability

• 2 billion hours MTBF
• 20x higher shock survivability
• Lifetime warranty
• Reduces field failures due to clock components and associated trouble shooting and repair costs