1 to 60 MHz, ±50 ppb Super-TCXO
The SiT5358 is a ±50 ppb precision MEMS Super-TCXO. This device is engineered for best dynamic performance. It is fully compliant to the GR-1244 Stratum 3 oscillator specifications. By leveraging SiTime’s unique DualMEMS™ temperature sensing and TurboCompensation™ technology, the SiT5358 delivers the most stable timing in the presence of environmental stressors – airflow, temperature perturbation, vibration, shock, and electromagnetic interference (EMI).
SiT5358 can be factory-programmed to any combination of frequency, voltage, and pull range. This programmability enables designers to optimize the clock configuration while eliminating the long lead time and customization costs associated with quartz TCXOs where each frequency is custom built.
| Oscillator Type | TCXO-SE |
| Frequency | 1 to 60 MHz |
| Frequency Stability (ppm) | ±0.05 |
| Operating Temperature Range (°C) | 0 to +70 |
| Output type | LVCMOS, Clipped sinewave |
| Package Type (mm²) | 5.0 x 3.2 10-pin |
| Phase Jitter (RMS) | 0.31 ps |
| Features | Precision TCXO |
| Voltage Supply (V) | 2.5, 2.8, 3.0, 3.3 |
| Pull Range (ppm) | ±6.25, ±10, ±12.5, ±25, ±50, ±80, ±100, ±125, ±150, ±200, ±400, ±600, ±800, ±1600, ±3200 |
| Availability | Sampling |
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Six industry standard footprints as small as 5.0 x 3.2 mm
Exceptional dynamic stability under airflow, fast temp. ramp
- ±50 ppb over-temp. stability
- 3e-11 ADEV at 10 second average time
- ±2.5 ppb/°C frequency slope (ΔF/ΔT), 10 °C/min ramp
- Ensures system-level quality of service for telecom and networking equipment in hostile environments
20x better phase noise under vibration
- Minimizes call and/or link drops in high-vibration environments
No activity dips or microjumps
- Eliminates any need for costly screening or burn-in tests
0.2 ps/mV power supply noise rejection (PSNR)
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Reduces BOM by eliminating a dedicated LDO for TCXO
LVCMOS or Clipped sinewave output
- Optimizes for best balance between EMI and jitter
Rich programmable features
- Any frequency between 1 to 60 MHz
- 2.25 to 3.63 V
- Large pull range from ±6.25 to ±3200 ppm
- Customize TCXO specifications for optimal system performance
Digital frequency tuning through I2C
- Eliminate frequency shift caused by board noise
Superior reliability
- 1 billion hours MTBF
- Lifetime Warranty: Reduces repair costs and field failures due to clock components
- SONET/SDH Stratum 3
- Synchronous Ethernet (G.8262, Options 1 and 2)
- Small cells
- IEEE 1588 boundary clocks and grandmasters
- Optical transport (OTN, OLT, etc.)
- Cable Model Termination System (CMTS)
- COSPAS/SARSAT
- Broadband satellite
- Instrumentation
- 核心与企业
- 无线与回程
- 光纤、有线与 DSL
- 高精度GNSS
- 雷达与激光雷达
- GPS/GNSS Modules
- 电源与能源
- 国防与航空航天
- 铁路
- 远程通信
- 资产跟踪
- 室内定位
- 智能农场
- 智能城市
| Document Name | Type |
|---|---|
| Electronics Industry Citizen Coalition Template | Other Quality Documents |
| Electronics Industry Citizen Coalition Template | Other Quality Documents |
| Manufacturing Notes for SiTime Oscillators | Other Quality Documents |
| SiTime Conflict Metal Declaration | Other Quality Documents |
| SiTime Conflict Metal Declaration | Other Quality Documents |
| SiTime Environmental Policy | Other Quality Documents |
| SiTime Environmental Policy | Other Quality Documents |
| SiTime Warranty on Date Code (16.72 kB) | Other Quality Documents |
| SiTime Warranty on Date Code (16.72 kB) | Other Quality Documents |
| ISO9001:2015 Certificate of Registration | Other Quality Documents |
| Conflict Minerals Reporting Template | Other Quality Documents |
| Conflict Minerals Reporting Template | Other Quality Documents |
- SiT5358 IBIS Model (LVCMOS output, 3.3 V)
- SiT5358 IBIS Model (LVCMOS output, 3.3 V)
- SiT5358 IBIS Model (LVCMOS output, 2.5 V)
- SiT5358 IBIS Model (LVCMOS output, 2.5 V)
- SiT5358 IBIS Model (CSINE output, 3.3 V)
- SiT5358 IBIS Model (CSINE output, 3.3 V)
- SiT5358 IBIS Model (CSINE output, 2.5 V)
- SiT5358 IBIS Model (CSINE output, 2.5 V)