60 to 220 MHz, Stratum 3 Super-TCXO
The SiT5357 is a ±100 ppb high-frequency MEMS Precision Super-TCXO. This device is engineered for best dynamic performance. It is fully compliant to the GR-1244 Stratum 3 oscillator specifications. By leveraging SiTime’s unique DualMEMS™ temperature sensing and TurboCompensation™ technology, the SiT5357 delivers the most stable timing in the presence of environmental stressors – airflow, temperature perturbation, vibration, shock, and electromagnetic interference (EMI).
SiT5357 can be factory-programmed to any combination of frequency, stability, voltage, and pull range. This programmability enables designers to optimize the clock configuration while eliminating the long lead time and customization costs associated with quartz TCXOs where each frequency is custom built.
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| Oscillator Type | TCXO-SE |
| Frequency | 60 to 220 MHz |
| Frequency Stability (ppm) | ±0.1, ±0.2, ±0.25 |
| Operating Temperature Range (°C) | -20 to +70, -40 to +85, -40 to +105 |
| Output type | LVCMOS |
| Package Type (mm²) | 5.0 x 3.2 10-pin |
| Phase Jitter (RMS) | 0.31 ps |
| Features | Precision TCXO |
| Voltage Supply (V) | 2.5, 2.8, 3, 3.3 |
| Pull Range (ppm) | ±6.25, ±10, ±12.5, ±25, ±50, ±80, ±100, ±125, ±150, ±200, ±400, ±600, ±800, ±1600, ±3200 |
| Availability | Production |
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Six industry standard footprints as small as 5.0 x 3.2 mm
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SiT5357 pin assignments
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SiT5357 block diagram
Up to 220 MHz output frequency
- Eliminates need for frequency multipliers
Exceptional dynamic stability under airflow, fast temp. ramp
- ±100 ppb over-temp. stability
- 3e-11 ADEV at 10 second average time
- ±2.5 ppb/°C frequency slope (ΔF/ΔT), 10 °C/min. ramp
- Ensures system level quality of service for telecom and networking equipment in hostile environments
20x better phase noise under vibration
- Minimizes call and/or link drops in high-vibration environments
No activity dips or microjumps
- Eliminates any need for costly screening or burn-in tests
0.2 ps/mV power supply noise rejection (PSNR)
- Reduces BOM by eliminating a dedicated LDO for TCXO
LVCMOS or Clipped sinewave output
- Optimizes for best balance between EMI and jitter
Rich programmable features
- Any frequency between 1 to 60 MHz
- 2.25 to 3.63 V
- Large pull range from ±6.25 to ±3200 ppm:
- Customize TCXO specifications for optimal system performance
Digital frequency tuning through I2C
- Eliminate frequency shift caused by board noise
Superior reliability
- 1 billion hours MTBF
- Lifetime Warranty: Reduces repair costs and field failures due to clock components
- SONET/SDH Stratum 3
- Synchronous Ethernet (G.8262, Options 1 and 2)
- Small cells
- IEEE 1588 boundary clocks and grandmasters
- Optical transport (OTN, OLT, etc.)
- COSPAS/SARSAT
- Broadband satellite
- Instrumentation
- 核心与企业
- 无线与回程
- 高精度GNSS
- GPS/GNSS Modules
- 铁路
- 远程通信
- 室内定位
- 智能农场
| Resource Name | Type |
|---|---|
| SiTime MEMS First 工艺 |