SiTime的MEMS高精度振荡器经过精心设计，能在气流、快速温度变化、冲击、震动、供电不足及EMI等恶劣环境影响下提供业界最稳定的时钟解决方案。上述器件可根据频率、精度、电压和拉动范围之间的任意组合在工厂中进行编程，从而不仅无需等待漫长的交货周期而且还能消除与石英TCXO和OCXO相关的定制成本。
Super-TCXOs
Elite Platform™ Super-TCXO是精度非常高（±0.1ppm到±2.5ppm）且频率为1到220MHz不等的高精度振荡器，具有无与伦比的动态性能和丰富特性。上述器件能让根深蒂固的时钟问题迎刃而解，充分满足电信、网络和高精度GNSS系统的需求。其也能用来在新兴的5G和IEEE 1588同步应用中替代传统的石英OCXO，同时降低功耗并减小尺寸。
- 动态精度提升30倍（约为1ppb/°C的ΔF/ΔT），抗气流和热冲击
- -40 °C到105 °C的工作温度范围理想适用于无风扇的户外设备
- I2C数字频率调谐功能，无需外部DAC，同时减小对电路板噪声的敏感度
- 片上电源噪声过滤，无需专用的LDO
- 无主动突降或微跳问题
| 器件 | 产品说明书 | 频率 | 精度(PPM) | 输出类型 | 供电电压(V) | 温度范围(°C) | 封装尺寸(mm2) |
|---|---|---|---|---|---|---|---|
| SiT5155 | 12 standard frequencies | ±0.5 | LVCMOS Clipped sinewave | 2.5 2.8 3 3.3 | -20 to +70 -40 to +85 -40 to +105 | 5.0 x 3.2 10-pin | |
| SiT5156 | 1 to 60 MHz | ±0.5 ±1 ±2.5 | LVCMOS Clipped sinewave | 2.5 2.8 3 3.3 | -20 to +70 -40 to +85 -40 to +105 | 5.0 x 3.2 10-pin | |
| SiT5157 | 60 to 220 MHz | ±0.5 ±1 ±2.5 | LVCMOS | 2.5 2.8 3 3.3 | -20 to +70 -40 to +85 -40 to +105 | 5.0 x 3.2 10-pin | |
| SiT5356 | 1 to 60 MHz | ±0.1 ±0.2 ±0.25 | LVCMOS Clipped sinewave | 2.5 2.8 3 3.3 | -20 to +70 -40 to +85 -40 to +105 | 5.0 x 3.2 10-pin | |
| SiT5357 | 60 to 220 MHz | ±0.1 ±0.2 ±0.25 | LVCMOS | 2.5 2.8 3 3.3 | -20 to +70 -40 to +85 -40 to +105 | 5.0 x 3.2 10-pin | |
| SiT5359 | 60 to 220 MHz | ±0.05 | LVCMOS | 2.5 2.8 3.0 3.3 | 0 to +70 -20 to +70 -40 to +85 -40 to +105 | 5.0 x 3.2 10-pin | |
| SiT5358 | 1 to 60 MHz | ±0.05 | LVCMOS Clipped sinewave | 2.5 2.8 3.0 3.3 | 0 to +70 -20 to +70 -40 to +85 -40 to +105 | 5.0 x 3.2 10-pin |
Automotive TCXOs
SiTime’s AEC-Q100 automotive TCXOs are based on the Elite Platform™ and are engineered to deliver the highest dynamic performance, reliability and robustness, making them ideal for autonomous driving systems. These 1 to 220 MHz precision devices with tight stability (±0.1 ppm to ±2.5 ppm) over AEC-Q100 Grade-2 temperature from -40°C to 105°C, solve deep-rooted timing problems in harsh automotive environments.
- 30x better dynamic stability (ΔF/ΔT of approx. 1 ppb/°C), resistant to airflow and thermal shock
- AEC-Q100 Grade-2 -40°C to 105°C operation for high-temp environments
- Industry best G-sensitivity of 0.1 ppb/g
- Best shock resistance at 10,000g, best vibration resistance at 70g
- Highest reliability at over 1 billion hours MTBF (< 1 FIT)
| 器件 | 产品说明书 | 频率 | 精度(PPM) | 输出类型 | 供电电压(V) | 温度范围(°C) | 封装尺寸(mm2) |
|---|---|---|---|---|---|---|---|
| SiT5186 | 1 to 60 MHz | ±0.5 ±1 ±2.5 | LVCMOS Clipped Sinewave | 2.5 2.8 3 3.3 | -20 to 70 (Grade 4) -40 to 85 (Grade 3) -40 to 105 (Grade 2) | 5.0 x 3.2 10-pin | |
| SiT5187 | 60 to 220 MHz | ±0.5 ±1 ±2.5 | LVCMOS | 2.5 2.8 3 3.3 | -20 to 70 (Grade 4) -40 to 85 (Grade 3) -40 to 105 (Grade 2) | 5.0 x 3.2 10-pin | |
| SiT5386 | 1 to 60 MHz | ±0.1 ±0.2 ±0.25 | LVCMOS Clipped Sinewave | 2.5 2.8 3 3.3 | -20 to 70 (Grade 4) -40 to 85 (Grade 3) -40 to 105 (Grade 2) | 5.0 x 3.2 10-pin | |
| SiT5387 | 60 to 220 MHz | ±0.1 ±0.2 ±0.25 | LVCMOS | 2.5 2.8 3 3.3 | -20 to +70 (Grade 4) -40 to +85 (Grade 3) -40 to +105 (Grade 2) | 5.0 x 3.2 10-pin |
TCXOs
SiTime可编程温度补偿振荡器(TCXO)堪称业界灵活性最高与可靠最高的解决方案，适用于电信、网络及工业应用领域。其可与石英TCXO引脚兼容，能在无需重新设计或进行板面布局更改的情况下即实现100%的简易替换。
- 从1MHz到625MHz的宽泛频率范围
- 可支持LVCMOS、LVPECL及LVDS
- 提供±5ppm的极佳频率精度
- 具有宽泛拉动范围（高达±1600ppm）的可选电压控制
| 器件 | 产品说明书 | 频率 | 精度(PPM) | 输出类型 | 供电电压(V) | 温度范围(°C) | 封装尺寸(mm2) |
|---|---|---|---|---|---|---|---|
| SiT5000 | 27 frequencies | ±5 | LVCMOS | 1.8 2.5 2.8 3.0 3.3 | -20 to +70 -40 to +85 | 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0 | |
| SiT5001 | 1 to 80 MHz | ±5 | LVCMOS | 1.8 2.5 2.8 3.0 3.3 | -20 to +70 -40 to +85 | 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0 | |
| SiT5021 | 1 to 220 MHz | ±5 | LVPECL LVDS | 2.5 3.3 2.25 to 3.63 | -20 to +70 -40 to +85 | 3.2x2.5 5.0x3.2 7.0x5.0 | |
| SiT5022 | 220 to 625 MHz | ±5 | LVPECL LVDS | 2.5 3.3 2.25 to 3.63 | -20 to +70 -40 to +85 | 3.2x2.5 5.0x3.2 7.0x5.0 |