MHz 振荡器

头

SiTime 可提供完整的 MEMS MHz 振荡器产品组合，包括单端振荡器、差分振荡器、车载振荡器、扩频振荡器和 VCXO。这些器件专为提供更高的可靠性，实现更短的交货周期，解决诸如 EMI 等独有的时钟问题而设计。无需重新设计或布局更改就能替代石英振荡器。

类别

LVPECL / LVDS / HCSL 振荡器 LVCMOS 振荡器 车载与高温振荡器 扩频振荡器 Voltage-Controlled Oscillators I2C/SPI Oscillators 数控 VCXO

LVPECL / LVDS / HCSL 振荡器

SiTime 可为网络、服务器、存储和电信应用提供广泛的高性能差分振荡器产品组合。当处于冲击、震动、高噪声电源和EMI 等常见的恶劣环境中时，SiT91xx和SiT93xx 系列能提供业界最佳的抖动性能和电源噪声抑制(PSNR) 功能。

  • 以1Hz 为增量提供从1MHz 到725MHz 不等的任意频率
  • 以符合业界标准的小外形封装提供0.23 到0.6ps 的抖动（典型值）
  • 提供业界最佳的±10ppm 的动态精度
器件 产品说明书 频率 精度(PPM) 输出类型 供电电压(V) 温度范围(°C) 封装尺寸(mm2)
SiT9120 31 standard frequencies ±10 ±20 ±25 ±50 LVPECL LVDS 2.5 3.3 2.25 to 3.63 -20 to +70 -40 to +85 3.2x2.5 5.0x3.2 7.0x5.0
SiT9121 1 to 220 MHz ±10 ±20 ±25 ±50 LVPECL LVDS 2.5 3.3 2.25 to 3.63 -20 to +70 -40 to +85 3.2x2.5 5.0x3.2 7.0x5.0
SiT9122 220 to 625 MHz ±10 ±20 ±25 ±50 LVPECL LVDS 2.5 3.3 2.25 to 3.63 -20 to +70 -40 to +85 3.2x2.5 5.0x3.2 7.0x5.0
SiT9365 32 standard frequencies ±10 ±20 ±25 ±50 LVPECL LVDS HCSL 2.5 2.8 3 3.3 -20 to +70 -40 to +85 -40 to +105 3.2x2.5 5.0x3.2 7.0x5.0
SiT9366 1 to 220 MHz ±10 ±20 ±25 ±50 LVPECL LVDS HCSL 2.5 2.8 3 3.3 -20 to +70 -40 to +85 -40 to +105 3.2x2.5 5.0x3.2 7.0x5.0
SiT9367 220 to 725 MHz ±10 ±20 ±25 ±50 LVPECL LVDS HCSL 2.5 2.8 3 3.3 -20 to +70 -40 to +85 -40 to +105 3.2x2.5 5.0x3.2 7.0x5.0
SiT9501 14 standard frequencies ±20 ±25 ±30 ±50 LVPECL LVDS HCSL Low-power HCSL FlexSwing 1.8 2.5 2.8 3.3 1.71 to 3.63 2.25 to 3.63 -20 to +70 -40 to +85 -40 to +95 -40 to +105 2.0x1.6 2.5x2.0 3.2x2.5
SiT9375 31 standard frequencies ±20 ±25 ±30 ±50 LVPECL LVDS HCSL Low-power HCSL FlexSwing 1.8 2.5 3.3 1.71 to 3.63 2.25 to 3.63 -20 to +70 -40 to +85 -40 to +95 -40 to +105 2.0 x 1.6 2.5 x 2.0 3.2 x 2.5

重要资源

AN10029 Output Terminations for Differential Oscillators

LVCMOS 振荡器

SiTime 可为消费类电子、工业类、IoT 和网络应用提供广泛的 LVCMOS 振荡器产品组合。这些器件不仅尺寸小而且功耗低，此外，还能以多种封装供货。

  • 1 至 220MHz时精度精确到小数点后六位
  • 低至 60µA 的最低功耗
  • 提供业界最佳的 ±10ppm 的频率精度
  • 最小封装 (1508) 以及符合业界标准的封装（2016、2520、3225、5032和7050）
  • SOT23-5-Leaded 封装实现最佳可制造性
  • 用于降低EMI 的 FlexEdge™ 压摆率选项：0.25ns 到 40ns 的可配置上升/下降时间
器件 产品说明书 频率 精度(PPM) 输出类型 供电电压(V) 温度范围(°C) 封装尺寸(mm2)
SiT1602 52 standard frequencies ±20 ±25 ±50 LVCMOS 1.8 2.5 to 3.3 1.8 to 3.3 (sampling) -20 to +70 -40 to +85 2.0x1.6 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0
SiT2001 1 to 110 MHz ±20 ±25 ±50 LVCMOS 1.8 2.5 to 3.3 -20 to +70 -40 to +85 SOT23 (2.9x2.8)
SiT2002 115 to 137 MHz ±20 ±25 ±50 LVCMOS 1.8 2.5 to 3.3 -20 to +70 -40 to +85 SOT23 (2.9x2.8)
SiT8008 1 to 110 MHz ±20 ±25 ±50 LVCMOS 1.8 2.5 to 3.3 1.8 to 3.3 (sampling) -20 to +70 -40 to +85 2.0x1.6 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0
SiT8009 115 to 137 MHz ±20 ±25 ±50 LVCMOS 1.8 2.5 to 3.3 1.8 to 3.3 (sampling) -20 to +70 -40 to +85 2.0x1.6 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0
SiT8208 1 to 80 MHz ±10 ±20 ±25 ±50 LVCMOS 1.8 2.5 to 3.3 -20 to +70 -40 to +85 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0
SiT8209 80 to 220 MHz ±10 ±20 ±25 ±50 LVCMOS 1.8 2.5 to 3.3 -20 to +70 -40 to +85 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0

重要资源

AN10002 Termination Recommendations for Single-ended Oscillator Driving Single or Multiple Loads AN10022 Rise and Fall Time Selection for SiT8103, SiT8003, and SiT9003

车载与高温振荡器

SiTime 的车载 (AEC-Q100) 与高温振荡器在 -55 °C 至 125 °C 的温度范围内可提供 ±20ppm 的频率稳定性。与石英振荡器相比，其精度高出 2 倍，可靠性高出 20 倍，抗冲击与耐振动能力高 30 倍。

  • 1 至 137MHz 并且精度精确到小数点后六位
  • -55 至 125 °C 的军规温度、-40 至 125 °C的车规温度、-40 至 105 °C的更广泛工规温度
  • 低至 0.1ppb/g 的振动敏感性（g敏感性）
  • 耐 50,000g 冲击和 70g 振动
  • 5 亿小时平均故障间隔时间（MTBF）
器件 产品说明书 频率 精度(PPM) 输出类型 供电电压(V) 温度范围(°C) 封装尺寸(mm2)
SiT2018 1 to 110 MHz ±20 ±25 ±50 LVCMOS 1.8 2.5 to 3.3 -40 to +105 -40 to +125 SOT23 (2.9x2.8)
SiT2019 115 to 137 MHz ±20 ±25 ±50 LVCMOS 1.8 2.5 to 3.3 -40 to +105 -40 to +125 SOT23 (2.9x2.8)
SiT2020 1 to 110 MHz ±20 ±25 ±50 LVCMOS 1.8 2.5 to 3.3 -55 to +125 SOT23 (2.9x2.8)
SiT2021 119 to 137 MHz ±20 ±25 ±50 LVCMOS 1.8 2.5 to 3.3 -55 to +125 SOT23 (2.9x2.8)
SiT2024 1 to 110 MHz ±20 ±25 ±50 LVCMOS 1.8 2.5 to 3.3 -40 to 85 (Grade 3) -40 to 105 (Grade 2) -40 to 125 (Grade 1) -55 to 125 (Ext. Cold Grade 1) SOT23 (2.9x2.8)
SiT2025 115 to 137 MHz ±20 ±25 ±50 LVCMOS 1.8 2.5 to 3.3 -40 to 85 (Grade 3) -40 to 105 (Grade 2) -40 to 125 (Grade 1) -55 to 125 (Ext. Cold Grade 1) SOT23 (2.9x2.8)
SiT8918 1 to 110 MHz ±20 ±25 ±50 LVCMOS 1.8 2.5 to 3.3 -40 to +105 -40 to +125 2.0x1.6 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0
SiT8919 115 to 137 MHz ±20 ±25 ±50 LVCMOS 1.8 2.5 to 3.3 -40 to +105 -40 to +125 2.0x1.6 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0
SiT8920 1 to 110 MHz ±20 ±25 ±50 LVCMOS 1.8 2.5 to 3.3 -55 to +125 2.0x1.6 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0
SiT8921 119 to 137 MHz ±20 ±25 ±50 LVCMOS 1.8 2.5 to 3.3 -55 to +125 2.0x1.6 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0
SiT8924 1 to 110 MHz ±20 ±25 ±30 ±50 LVCMOS 1.8 2.5 to 3.3 -40 to +85 -40 to +105 -40 to +125 -55 to +125 2.0x1.6 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0
SiT8925 115 to 137 MHz ±20 ±25 ±30 ±50 LVCMOS 1.8 2.5 to 3.3 -40 to +85 -40 to +105 -40 to +125 -55 to +125 2.0x1.6 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0
SiT9386 1 to 220 MHz ±25 ±50 LVPECL LVDS HCSL 2.5 2.8 3.0 3.3 -40 to 85 (Grade 3) -40 to 105 (Grade 2) 3.2x2.5 7.0x5.0
SiT9387 220 to 725 MHz ±25 ±50 LVPECL LVDS HCSL 2.5 2.8 3.0 3.3 -40 to 85 (Grade 3) -40 to 105 (Grade 2) 3.2x2.5 7.0x5.0
SiT9025 1 to 150 MHz ±20 ±25 ±50 LVCMOS 1.8 2.5 to 3.3 -40 to 85 (Grade 3) -40 to 105 (Grade 2) -40 to 125 (Grade 1) -55 to 125 (Ext. Cold Grade 1) 2.0x1.6 mm 2.5x2.0 mm 3.2x2.5 mm

重要资源

Increase automotive reliability and performance with ultra robust MEMS oscillators AEC-Q100 Automotive Oscillators for ADAS, Camera Modules, and In-Vehicle Ethernet AEC-Q100 Automotive Oscillators for ADAS, Camera Modules, and In-Vehicle Ethernet

扩频振荡器

SiTime用于降低EMI 的振荡器可通过扩频时钟和时钟信号的上升/下降时间调整来确保满足辐射合规要求。此类振荡器由SiTime 的Time Machine II 编程器提供支持，能帮助工程师快速降低辐射水平，进而确保客户通过合规性认证。

  • 基频高达17dB，谐波高达30dB
  • 宽泛的扩展范围：高达4% 的峰至峰
  • 提供FlexEdge™ 可配置上升下降时间选项：0.25ns到40ns 的压摆率
器件 产品说明书 频率 精度(PPM) 输出类型 供电电压(V) 温度范围(°C) 封装尺寸(mm2)
SiT9002 1 to 220 MHz ±25 ±50 LVPECL LVDS CML HCML 1.8 2.5 3.3 -20 to +70 -40 to +85 5.0x3.2 7.0x5.0
SiT9003 1 to 110 MHz ±50 ±100 LVCMOS 1.8 2.5 2.8 3.3 -20 to +70 -40 to +85 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0
SiT9005 1 to 141 MHz ±20 ±25 ±50 LVCMOS 1.8 2.5 to 3.3 -20 to +70 -40 to +85 2.0x1.6 2.5x2.0 3.2x2.5

重要资源

AN10005 Spread Spectrum Clock Oscillators AN10022 Rise and Fall Time Selection for SiT8103, SiT8003, and SiT9003

Voltage-Controlled Oscillators

SiTime MEMS VCXO 可为视频分配(CMTS)、网络、电信及仪器应用提供优异的动态性能与业界最高的可靠性。这些器件经过精心设计，可在面临冲击、震动、电源噪声高以及EMI 等常见环境问题时，仍然保持相位噪声和频率微调精度不变。它们能够让线缆头端和远程射频头(RRH) 等设备在无空调基站内或屋顶等非受控环境中提供最高性能、最佳可靠性及最优的服务质量。

  • 以1Hz 步进提供从 1MHz 到 725MHz 不等的任意频率
  • 在整个温度范围内（-40到+85 °C）提供业界最佳的±15 ppm 的动态精度
  • 0.02ps/mV 的电源噪声抑制(PSNR) 水平，降低供电要求
  • 比石英优异50 倍的最佳(0.1%) 和最宽（±25 到±3200ppm）拉动范围线性度
器件 产品说明书 频率 精度(PPM) 输出类型 供电电压(V) 温度范围(°C) 封装尺寸(mm2)
SiT3372 1 to 220 MHz ±15 ±25 ±30 ±50 LVPECL LVDS HCSL 2.5 2.8 3.0 3.3 -20 to +70 -40 to +85 -40 to +105 3.2x2.5 7.0x5.0 5.0x3.2
SiT3373 220 to 725 MHz ±15 ±25 ±30 ±50 LVPECL LVDS HCSL 2.5 2.8 3.0 3.3 -20 to +70 -40 to +85 -40 to +105 3.2x2.5 7.0x5.0 5.0x3.2
SiT3807 31 frequencies ±25 ±50 LVCMOS 1.8 2.5 2.8 3.3 -20 to +70 -40 to +85 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0
SiT3808 1 to 80 MHz ±25 ±50 LVCMOS 1.8 2.5 2.8 3.3 -20 to +70 -40 to +85 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0
SiT3809 80 to 220 MHz ±25 ±50 LVCMOS 1.8 2.5 2.8 3.3 -20 to +70 -40 to +85 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0

重要资源

AN10020 Definitions of VCXO Specifications AN10021 VCXO Parameter Trade-offs for PLL Design

I2C/SPI Oscillators

SiTime's Elite Platform™ I2C/SPI oscillators enable users to program output frequency and pull frequency in-system using a digital interface, offering designers great flexibility. This family offers ultra-low jitter and utilizes SiTime’s unique DualMEMS™ temperature sensing and TurboCompensation™ technology to deliver exceptional dynamic performance.

  • Ideal for replacing multiple timing components in systems that support multiple frequencies such as telecom, networking, server, storage, broadcasting, test and measurement equipment 
  • Any-frequency mode for programming output frequency via I2C or SPI from 1 MHz to 725 MHz
  • Digitally controlled oscillator (DCO) mode for pulling/tuning frequency up to ±3200 ppm via I2C or SPI with 0.005 ppb resolution
  • Any combination of frequencies (1 MHz to 725 MHz), voltage (2.5 V to 3.3 V), pull range (±25 ppm to ±3200 ppm), and three DE output formats (LVPECL, LVDS, or HCSL)
  • 0.2 ps typical integrated phase jitter
器件 产品说明书 频率 精度(PPM) 输出类型 供电电压(V) 温度范围(°C) 封装尺寸(mm2)
SiT3521 1 to 340 MHz ±20 ±25 ±50 LVPECL LVDS HCSL 2.5 to 3.3 -20 to +70 -40 to +85 -40 to +105 5.0 x 3.2 10-pin
SiT3522 340 to 725 MHz ±20 ±25 ±50 LVPECL LVDS HCSL 2.5 to 3.3 -20 to +70 -40 to +85 -40 to +105 5.0 x 3.2 10-pin

重要资源

AN10050 I2C/SPI Programmable Oscillators

数控 VCXO

SiTime的数控MEMS振荡器(DCXO)能帮助用户通过单线数字接口对输出频率进行微调，牵引范围高达±1600ppm，从而无需在传统的VCXO设计中使用外部DAC。此外，其还可消除在电压控制线路上由电路板噪声引起的频移。

  • 业界最宽泛的拉动范围选项，包括±25、±50、±100、±150、±200、±400、±800及±1600ppm
  • 1ppb的拉动范围分辨率
  • 任意组合的频率（高达625MHz）、电压（1.8V、2.5V至3.3V）、拉动范围（±25ppm至±1600ppm）以及业界标准封装（3225、5032或7050）
  • LVCMOS输出（SiT3907）与差动输出（SiT3921和SiT3922）
器件 产品说明书 频率 精度(PPM) 输出类型 供电电压(V) 温度范围(°C) 封装尺寸(mm2)
SiT3907 1 to 220 MHz ±10 ±25 ±50 LVCMOS 1.8 2.5 2.8 3.3 -20 to +70 -40 to +85 3.2x2.5 5.0x3.2 7.0x5.0
SiT3921 1 to 220 MHz ±10 ±25 ±50 LVPECL LVDS 2.5 3.3 -20 to +70 -40 to +85 3.2x2.5 5.0x3.2 7.0x5.0
SiT3922 220 to 625 MHz ±10 ±25 ±50 LVPECL LVDS 2.5 3.3 -20 to +70 -40 to +85 3.2x2.5 5.0x3.2 7.0x5.0

重要资源

AN10041 Designing with the SiT39xx Family of DCXOs (Digitally Controlled Oscillators)