SiTime 可提供完整的 MEMS MHz 振荡器产品组合,包括单端振荡器、差分振荡器、车载振荡器、扩频振荡器和 VCXO。这些器件专为提供更高的可靠性,实现更短的交货周期,解决诸如 EMI 等独有的时钟问题而设计。无需重新设计或布局更改就能替代石英振荡器。
SiTime 可为网络、服务器、存储和电信应用提供广泛的高性能差分振荡器产品组合。当处于冲击、震动、高噪声电源和EMI 等常见的恶劣环境中时,SiT91xx和SiT93xx 系列能提供业界最佳的抖动性能和电源噪声抑制(PSNR) 功能。
器件 | 产品说明书 | 频率 | 精度(PPM) | 输出类型 | 供电电压(V) | 温度范围(°C) | 封装尺寸(mm2) |
---|---|---|---|---|---|---|---|
SiT9120 | 31 standard frequencies | ±10 ±20 ±25 ±50 | LVPECL LVDS | 2.5 3.3 2.25 to 3.63 | -20 to +70 -40 to +85 | 3.2x2.5 5.0x3.2 7.0x5.0 | |
SiT9121 | 1 to 220 MHz | ±10 ±20 ±25 ±50 | LVPECL LVDS | 2.5 3.3 2.25 to 3.63 | -20 to +70 -40 to +85 | 3.2x2.5 5.0x3.2 7.0x5.0 | |
SiT9122 | 220 to 625 MHz | ±10 ±20 ±25 ±50 | LVPECL LVDS | 2.5 3.3 2.25 to 3.63 | -20 to +70 -40 to +85 | 3.2x2.5 5.0x3.2 7.0x5.0 | |
SiT9365 | 32 standard frequencies | ±10 ±20 ±25 ±50 | LVPECL LVDS HCSL | 2.5 2.8 3 3.3 | -20 to +70 -40 to +85 -40 to +105 | 3.2x2.5 5.0x3.2 7.0x5.0 | |
SiT9366 | 1 to 220 MHz | ±10 ±20 ±25 ±50 | LVPECL LVDS HCSL | 2.5 2.8 3 3.3 | -20 to +70 -40 to +85 -40 to +105 | 3.2x2.5 5.0x3.2 7.0x5.0 | |
SiT9367 | 220 to 725 MHz | ±10 ±20 ±25 ±50 | LVPECL LVDS HCSL | 2.5 2.8 3 3.3 | -20 to +70 -40 to +85 -40 to +105 | 3.2x2.5 5.0x3.2 7.0x5.0 | |
SiT9501 | 14 standard frequencies | ±20 ±25 ±30 ±50 | LVPECL LVDS HCSL Low-power HCSL FlexSwing | 1.8 2.5 2.8 3.3 1.71 to 3.63 2.25 to 3.63 | -20 to +70 -40 to +85 -40 to +95 -40 to +105 | 2.0x1.6 2.5x2.0 3.2x2.5 | |
SiT9375 | 31 standard frequencies | ±20 ±25 ±30 ±50 | LVPECL LVDS HCSL Low-power HCSL FlexSwing | 1.8 2.5 3.3 1.71 to 3.63 2.25 to 3.63 | -20 to +70 -40 to +85 -40 to +95 -40 to +105 | 2.0 x 1.6 2.5 x 2.0 3.2 x 2.5 |
SiTime 可为消费类电子、工业类、IoT 和网络应用提供广泛的 LVCMOS 振荡器产品组合。这些器件不仅尺寸小而且功耗低,此外,还能以多种封装供货。
器件 | 产品说明书 | 频率 | 精度(PPM) | 输出类型 | 供电电压(V) | 温度范围(°C) | 封装尺寸(mm2) |
---|---|---|---|---|---|---|---|
SiT1602 | 52 standard frequencies | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 1.8 to 3.3 (sampling) | -20 to +70 -40 to +85 | 2.0x1.6 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0 | |
SiT2001 | 1 to 110 MHz | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -20 to +70 -40 to +85 | SOT23 (2.9x2.8) | |
SiT2002 | 115 to 137 MHz | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -20 to +70 -40 to +85 | SOT23 (2.9x2.8) | |
SiT8008 | 1 to 110 MHz | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 1.8 to 3.3 (sampling) | -20 to +70 -40 to +85 | 2.0x1.6 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0 | |
SiT8009 | 115 to 137 MHz | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 1.8 to 3.3 (sampling) | -20 to +70 -40 to +85 | 2.0x1.6 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0 | |
SiT8208 | 1 to 80 MHz | ±10 ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -20 to +70 -40 to +85 | 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0 | |
SiT8209 | 80 to 220 MHz | ±10 ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -20 to +70 -40 to +85 | 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0 |
SiTime 的车载 (AEC-Q100) 与高温振荡器在 -55 °C 至 125 °C 的温度范围内可提供 ±20ppm 的频率稳定性。与石英振荡器相比,其精度高出 2 倍,可靠性高出 20 倍,抗冲击与耐振动能力高 30 倍。
器件 | 产品说明书 | 频率 | 精度(PPM) | 输出类型 | 供电电压(V) | 温度范围(°C) | 封装尺寸(mm2) |
---|---|---|---|---|---|---|---|
SiT2018 | 1 to 110 MHz | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -40 to +105 -40 to +125 | SOT23 (2.9x2.8) | |
SiT2019 | 115 to 137 MHz | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -40 to +105 -40 to +125 | SOT23 (2.9x2.8) | |
SiT2020 | 1 to 110 MHz | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -55 to +125 | SOT23 (2.9x2.8) | |
SiT2021 | 119 to 137 MHz | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -55 to +125 | SOT23 (2.9x2.8) | |
SiT2024 | 1 to 110 MHz | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -40 to 85 (Grade 3) -40 to 105 (Grade 2) -40 to 125 (Grade 1) -55 to 125 (Ext. Cold Grade 1) | SOT23 (2.9x2.8) | |
SiT2025 | 115 to 137 MHz | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -40 to 85 (Grade 3) -40 to 105 (Grade 2) -40 to 125 (Grade 1) -55 to 125 (Ext. Cold Grade 1) | SOT23 (2.9x2.8) | |
SiT8918 | 1 to 110 MHz | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -40 to +105 -40 to +125 | 2.0x1.6 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0 | |
SiT8919 | 115 to 137 MHz | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -40 to +105 -40 to +125 | 2.0x1.6 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0 | |
SiT8920 | 1 to 110 MHz | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -55 to +125 | 2.0x1.6 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0 | |
SiT8921 | 119 to 137 MHz | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -55 to +125 | 2.0x1.6 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0 | |
SiT8924 | 1 to 110 MHz | ±20 ±25 ±30 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -40 to +85 -40 to +105 -40 to +125 -55 to +125 | 2.0x1.6 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0 | |
SiT8925 | 115 to 137 MHz | ±20 ±25 ±30 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -40 to +85 -40 to +105 -40 to +125 -55 to +125 | 2.0x1.6 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0 | |
SiT9386 | 1 to 220 MHz | ±20 ±25 ±50 | LVPECL LVDS HCSL | 2.5 2.8 3.0 3.3 | -40 to 85 (Grade 3) -40 to 105 (Grade 2) | 3.2x2.5 7.0x5.0 | |
SiT9387 | 220 to 725 MHz | ±20 ±25 ±50 | LVPECL LVDS HCSL | 2.5 2.8 3.0 3.3 | -40 to 85 (Grade 3) -40 to 105 (Grade 2) | 3.2x2.5 7.0x5.0 | |
SiT9025 | 1 to 150 MHz | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -40 to 85 (Grade 3) -40 to 105 (Grade 2) -40 to 125 (Grade 1) -55 to 125 (Ext. Cold Grade 1) | 2.0x1.6 mm 2.5x2.0 mm 3.2x2.5 mm |
SiTime用于降低EMI 的振荡器可通过扩频时钟和时钟信号的上升/下降时间调整来确保满足辐射合规要求。此类振荡器由SiTime 的Time Machine II 编程器提供支持,能帮助工程师快速降低辐射水平,进而确保客户通过合规性认证。
器件 | 产品说明书 | 频率 | 精度(PPM) | 输出类型 | 供电电压(V) | 温度范围(°C) | 封装尺寸(mm2) |
---|---|---|---|---|---|---|---|
SiT9002 | 1 to 220 MHz | ±25 ±50 | LVPECL LVDS CML HCML | 1.8 2.5 3.3 | -20 to +70 -40 to +85 | 5.0x3.2 7.0x5.0 | |
SiT9003 | 1 to 110 MHz | ±50 ±100 | LVCMOS | 1.8 2.5 2.8 3.3 | -20 to +70 -40 to +85 | 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0 | |
SiT9005 | 1 to 141 MHz | ±20 ±25 ±50 | LVCMOS | 1.8 2.5 to 3.3 | -20 to +70 -40 to +85 | 2.0x1.6 2.5x2.0 3.2x2.5 |
SiTime MEMS VCXO 可为视频分配(CMTS)、网络、电信及仪器应用提供优异的动态性能与业界最高的可靠性。这些器件经过精心设计,可在面临冲击、震动、电源噪声高以及EMI 等常见环境问题时,仍然保持相位噪声和频率微调精度不变。它们能够让线缆头端和远程射频头(RRH) 等设备在无空调基站内或屋顶等非受控环境中提供最高性能、最佳可靠性及最优的服务质量。
器件 | 产品说明书 | 频率 | 精度(PPM) | 输出类型 | 供电电压(V) | 温度范围(°C) | 封装尺寸(mm2) |
---|---|---|---|---|---|---|---|
SiT3372 | 1 to 220 MHz | ±15 ±25 ±30 ±50 | LVPECL LVDS HCSL | 2.5 2.8 3.0 3.3 | -20 to +70 -40 to +85 -40 to +105 | 3.2x2.5 7.0x5.0 5.0x3.2 | |
SiT3373 | 220 to 725 MHz | ±15 ±25 ±30 ±50 | LVPECL LVDS HCSL | 2.5 2.8 3.0 3.3 | -20 to +70 -40 to +85 -40 to +105 | 3.2x2.5 7.0x5.0 5.0x3.2 | |
SiT3807 | 31 frequencies | ±25 ±50 | LVCMOS | 1.8 2.5 2.8 3.3 | -20 to +70 -40 to +85 | 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0 | |
SiT3808 | 1 to 80 MHz | ±25 ±50 | LVCMOS | 1.8 2.5 2.8 3.3 | -20 to +70 -40 to +85 | 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0 | |
SiT3809 | 80 to 220 MHz | ±25 ±50 | LVCMOS | 1.8 2.5 2.8 3.3 | -20 to +70 -40 to +85 | 2.5x2.0 3.2x2.5 5.0x3.2 7.0x5.0 |
SiTime's Elite Platform™ I2C/SPI oscillators enable users to program output frequency and pull frequency in-system using a digital interface, offering designers great flexibility. This family offers ultra-low jitter and utilizes SiTime’s unique DualMEMS™ temperature sensing and TurboCompensation™ technology to deliver exceptional dynamic performance.
器件 | 产品说明书 | 频率 | 精度(PPM) | 输出类型 | 供电电压(V) | 温度范围(°C) | 封装尺寸(mm2) |
---|---|---|---|---|---|---|---|
SiT3521 | 1 to 340 MHz | ±20 ±25 ±50 | LVPECL LVDS HCSL | 2.5 to 3.3 | -20 to +70 -40 to +85 -40 to +105 | 5.0 x 3.2 10-pin | |
SiT3522 | 340 to 725 MHz | ±20 ±25 ±50 | LVPECL LVDS HCSL | 2.5 to 3.3 | -20 to +70 -40 to +85 -40 to +105 | 5.0 x 3.2 10-pin |
SiTime的数控MEMS振荡器(DCXO)能帮助用户通过单线数字接口对输出频率进行微调,牵引范围高达±1600ppm,从而无需在传统的VCXO设计中使用外部DAC。此外,其还可消除在电压控制线路上由电路板噪声引起的频移。
器件 | 产品说明书 | 频率 | 精度(PPM) | 输出类型 | 供电电压(V) | 温度范围(°C) | 封装尺寸(mm2) |
---|---|---|---|---|---|---|---|
SiT3907 | 1 to 220 MHz | ±10 ±25 ±50 | LVCMOS | 1.8 2.5 2.8 3.3 | -20 to +70 -40 to +85 | 3.2x2.5 5.0x3.2 7.0x5.0 | |
SiT3921 | 1 to 220 MHz | ±10 ±25 ±50 | LVPECL LVDS | 2.5 3.3 | -20 to +70 -40 to +85 | 3.2x2.5 5.0x3.2 7.0x5.0 | |
SiT3922 | 220 to 625 MHz | ±10 ±25 ±50 | LVPECL LVDS | 2.5 3.3 | -20 to +70 -40 to +85 | 3.2x2.5 5.0x3.2 7.0x5.0 |