SiTime, Silicon MEMS Oscillators and Clock Generators

SiT5302: High Frequency Stratum 3 MEMS VCTCXO

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The SiT5302 is the industry's only high frequency Stratum 3 VCTCXO. It extends frequency coverage up to 220MHz, a dramatic enhancement over legacy quartz OCXOs and TCXOs that offer 5-10 standard frequencies at less than 60 MHz. Combined with low voltage operations, large pull range, and programmable features such as configurable rise/fall time, this device enables new opportunites for engineers to simplify design, improve system performance, reduce board size and lower cost without sacrificing lead time. In addition, its superior shock and vibration resistance, and 2 FIT reliability are 20 times better than quartz, and are ideal for high reliability telecom and networking infrastructure applicaitons.



Frequency Range (MHz) 60 - 220

Frequency Stability (PPM)


20-year ±4.6

24-hour hold-over ±0.37
  Over-temperature ±0.1
RMS Integrated Phase Jitter (12kHz to 20MHz) < 1ps
Temp Range (°C) 0 to +70
Supply Voltage (V) 2.5 - 3.3 (continuous)
Voltage Control Yes
Pull Range (PPM) ±12.5
Control Voltage (V) 0 to VDD
Rise/Fall Times
1ns - 6ns with SoftEdge configurable rise/fall time control
Package LxWxH (mm) 2.5x2.0x0.75, 3.2x2.5x0.75, 5.0x3.2x0.75, 7.0x5.0x0.9
Status Contact SiTime
  • Wireless basestation
  • Synchronized Ethenet
  • IP Timing
  • Smart Grid
  • Instrumentation

Features Benefits
  • Stratum 3 stabilty
  • An all-silicon atlernative to quartz based Stratum 3 OCXO and TCXO
  • Superior frequency coverage at low operating voltages
    • Frequency from 60-220 MHz
    • Supply voltage of 2.5V to 3.3V

  • Customized specification for optimal system performance
  • Easy availability of any device specification within the operating range
  • Small standard packages (2520, 3225, 5032, 7050)
  • Board space savings
  • Simpler board designs
  • Programmable Features
    • Configurable drive strength using SoftEdge™ technology
    • Custom duty cycles
  • Slower rise/fall time that reduce system EMI
  • Best system level performance
  • No Activity Dips
  • Less call drops
  • Better wireless experiences
  • Large pull range
  • Better RF channel separation
  • Improved network efficiency
  • Superior Robustness and Reliability
    • 500 million hours MTBF
    • 50,000 g shock resistance
    • 70 g vibration resistance
  • Improve system robustness in all operating environments
  • Reduce field failures due to clock components and their repair cost
  • 3-5 weeks lead time
    • Any frequency
    • Any voltage
    • Any package
  • Easier to buy
  • Reduce risk of shortage

Coming Soon

Contact SiTime Sales.

1.8V LVCMOS IBIS iconSiT5302_1v8v
2.5V LVCMOS IBIS iconSiT5302_2v5v
2.8V LVCMOS IBIS iconSiT5302_2v8v
3.3V LVCMOS IBIS iconSiT5302_3v3v