SiTime, Silicon MEMS Oscillators and Clock Generators

SiT5301: High Performance Stratum 3 MEMS VCTCXO

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The Stratum 3 compliant SiT5301, with its rich feature set, permits an unlimited number of oscillator configurations that are simply not available from legacy OCXOs and TCXOs. This device supports any combination of frequency (up to 60MHz with 6 decimal places of accuracy), voltage (2.5V-3.3V) and package (2520, 3225, 5032, 7050) along with large pull range (±12.5PPM), no Activity Dips and programmable rise/fall time control for better EMI. It provides superior shock and vibration resistance, and 2 FIT reliability that is 20 times better than quartz devices and is ideal for high reliability telecom and networking infrastructure applications


Frequency Range (MHz) 1 – 60

Frequency Stability (PPM)


20-year ±4.6

24-hour hold-over ±0.37
  Over temperature ±0.1
RMS Integrated Phase Jitter (12kHz to 20MHz) < 1ps
Temp Range (°C) 0 to +70
Supply Voltage (V) 2.5 - 3.3 (continuous)
Voltage Control Yes
Pull Range (PPM) ±12.5
Control Voltage (V) 0 to VDD
Rise/Fall Time 1ns - 6ns with SoftEdge configurable control
Package LxWxH (mm) 2.5x2.0x0.75, 3.2x2.5x0.75, 5.0x3.2x0.75, 7.0x5.0x0.9
Status Contact  SiTime
  • Wireless basestation
  • Synchronized Ethernet
  • IP Timing
  • Smart Grid
  • Instrumentation

Features Benefits
  • Stratum 3 stabilty
  • An all-silicon atlernative to quartz based Stratum 3 OCXO and TCXO
  • Superior frequency coverage at low operating voltages
    • Frequencies from 1MHz to 60MHz
    • Supply voltage of 2.5V to 3.3V
  • Customized specification for optimal system performance
  • Easy availability of any device specification within the operating range
  • Small standard packages (2520, 3225, 5032, 7050)
  • Board space savings
  • Simpler board designs
  • Programmable Features
    • Configurable drive strength using SoftEdge™ technology
    • Custom duty cycles
  • Slower rise/fall time that reduces system EMI
  • Best system level performance
  • No Activity Dips
  • Less call drops
  • Better wireless experiences
  • Large pull range
  • Better RF channel seperation
  • Improved network efficiency
  • Superior Robustness and Reliability
    • 500 million hour MTBF
    • 50,000 g shock resistance
    • 70 g vibration resistance
  • Improve system robustenss in all operating environments
  • Reduce field failures due to clock components and the repair cost
  • 3-5 weeks lead time
    • Any frequency
    • Any voltage
    • Any package
  • Easier to buy
  • Reduce risk of shortage

Coming Soon

Contact SiTime Sales.

1.8V LVCMOS IBIS iconSiT5301_1v8v
2.5V LVCMOS IBIS iconSiT5301_2v5v
2.8V LVCMOS IBIS iconSiT5301_2v8v
3.3V LVCMOS IBIS icon SiT5301_3v3v