80 to 220 MHz, ±10 to ±50 ppm Oscillator
LoginThe SiT8209 is a high-frequency, high-performance oscillator for telecom, networking, storage and wireless applications. It is the industry's first MEMS oscillator to deliver 500 femtoseconds of typical integrated RMS phase jitter (12 kHz to 20 MHz) and ±10 ppm frequency stability across all temperature ranges. This device has a rich set of configurable features, such as any frequency from 80 to 220 MHz and is available with extremely short lead time to ensure the fast time-to-market. With FlexEdge™ technology for EMI reduction, the SiT8209 improves system performance. The SiT8209 is footprint compatible with legacy quartz, SAW and overtone oscillators and can replace these devices without any board changes.
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| "Specs" | "Value" |
|---|---|
| Frequency | 80 to 220 MHz |
| Frequency Stability (ppm) | ±10, ±20, ±25, ±50 |
| Operating Temperature Range (°C) | -20 to +70, -40 to +85 |
| Package Type (mm²) | 2.5x2.0, 3.2x2.5, 5.0x3.2, 7.0x5.0 |
| Oscillator Type | XO-SE |
| Phase Jitter (rms) | 0.5 ps |
| FlexEdgeTM Rise/Fall Time | Yes |
| Voltage Supply (V) | 1.8, 2.5 to 3.3 |
| Features | Field programmable, Low jitter |
| Availability | Production |
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Image: SiT8209 4-pin package, top & bottom
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SiT8209 pin assignments
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Phase Noise, 156.25 MHz, 3.3V, LVCMOS Output
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Configurable FlexEdge drive strength reduces EMI by slowing rise/fall time – for example the 11th clock harmonic is reduced by 35 dB by increasing the rise/fall edge from 5% to 45% of the period
<1 ps RMS integrated phase jitter (12 kHz to 20 MHz)
- Great jitter margin for the most stringent applications such as SONET
Excellent frequency stability, as low as ±10 ppm
- Better timing margin that enhances system stability and robustness
Extensive programmability
- Frequency from 80.000001 to 220
- Supply voltage of 1.8 V; 2.5 V to 3.3 V
- Frequency stability from ±10 ppm to ±50 ppm
- Customized specification for optimal system performance
- Easy availability of any device specifications within the operating range
Configurable drive strength using FlexEdge technology
- Slower rise/fall time that minimizes EMI from the oscillator
- Saves cost by driving multiple loads and eliminate additional timing components
Three industry-standard packages
- 100% drop-in replacement for quartz VCXO without any design changes
4 to 6 weeks lead time
- Reduce inventory overhead
- Mitigate shortage risks
- Computer Servers
- Data Centers
- Raid Controllers
- Routers
- Switches
- Telecom Equipment
- SATA / SAS
- Fibre Channel
- SONET
- 10G Ethernet
- DDR
- SiT8209 (3.3 V E) IBIS Model
- SiT8209 (3.3 V R) IBIS Model
- SiT8209 (3.3 V S) IBIS Model
- SiT8209 (3.3 V D) IBIS Model
- SiT8209 (3.3 V Q) IBIS Model
- SiT8209 (3.3 V P) IBIS Model
- SiT8209 (3.3 V G) IBIS Model
- SiT8209 (3.3 V T) IBIS Model
- SiT8209 (3.3 V DFLT) IBIS Model
- SiT8209 (3.3 V B) IBIS Model
- SiT8209 (3.3 V U) IBIS Model
- SiT8209 (3.3 V W) IBIS Model
- SiT8209 (3.3 V A) IBIS Model
- SiT8209 (3.3 V L) IBIS Model
- SiT8209 (3.3 V M) IBIS Model
- SiT8209 (3.3 V Z) IBIS Model
- SiT8209 (3.3 V X) IBIS Model
- SiT8209 (3.3 V N) IBIS Model
- SiT8209 (3.3 V Y) IBIS Model
- SiT8209 (3.3 V K) IBIS Model
- SiT8209 (1.8 V K) IBIS Model
- SiT8209 (1.8 V M) IBIS Model
- SiT8209 (1.8 V L) IBIS Model
- SiT8209 (1.8 V Y) IBIS Model
- SiT8209 (1.8 V N) IBIS Model
- SiT8209 (1.8 V X) IBIS Model
- SiT8209 (1.8 V DFLT) IBIS Model
- SiT8209 (1.8 V U) IBIS Model
- SiT8209 (1.8 V B) IBIS Model
- SiT8209 (1.8 V T) IBIS Model
- SiT8209 (1.8 V A) IBIS Model
- SiT8209 (1.8 V W) IBIS Model
- SiT8209 (1.8 V D) IBIS Model
- SiT8209 (1.8 V S) IBIS Model
- SiT8209 (1.8 V R) IBIS Model
- SiT8209 (1.8 V E) IBIS Model
- SiT8209 (1.8 V G) IBIS Model
- SiT8209 (1.8 V P) IBIS Model
- SiT8209 (1.8 V Q) IBIS Model
- SiT8209 (1.8 V F) IBIS Model
- SiT8209 (2.8 V K) IBIS Model
- SiT8209 (2.8 V Y) IBIS Model
- SiT8209 (2.8 V N) IBIS Model
- SiT8209 (2.8 V X) IBIS Model
- SiT8209 (2.8 V Z) IBIS Model
- SiT8209 (2.8 V M) IBIS Model
- SiT8209 (2.8 V L) IBIS Model
- SiT8209 (2.8 V A) IBIS Model
- SiT8209 (2.8 V W) IBIS Model
- SiT8209 (2.8 V U) IBIS Model
- SiT8209 (2.8 V B) IBIS Model
- SiT8209 (2.8 V DFLT) IBIS Model
- SiT8209 (2.8 V T) IBIS Model
- SiT8209 (2.8 V P) IBIS Model
- SiT8209 (2.8 V Q) IBIS Model
- SiT8209 (2.8 V F) IBIS Model
- SiT8209 (2.8 V D) IBIS Model
- SiT8209 (2.8 V S) IBIS Model
- SiT8209 (2.8 V R) IBIS Model
- SiT8209 (2.8 V E) IBIS Model
- SiT8209 (2.5 V F) IBIS Model
- SiT8209 (2.5 V Q) IBIS Model
- SiT8209 (2.5 V P) IBIS Model
- SiT8209 (2.5 V E) IBIS Model
- SiT8209 (2.5 V R) IBIS Model
- SiT8209 (2.5 V S) IBIS Model
- SiT8209 (2.5 V D) IBIS Model
- SiT8209 (2.5 V W) IBIS Model
- SiT8209 (2.5 V A) IBIS Model
- SiT8209 (2.5 V T) IBIS Model
- SiT8209 (2.5 V B) IBIS Model
- SiT8209 (2.5 V U) IBIS Model
- SiT8209 (2.5 V X) IBIS Model
- SiT8209 (2.5 V N) IBIS Model
- SiT8209 (2.5 V Y) IBIS Model
- SiT8209 (2.5 V L) IBIS Model
- SiT8209 (2.5 V M) IBIS Model
- SiT8209 (2.5 V Z) IBIS Model
- SiT8209 (2.5 V DFLT) IBIS Model
- SiT8209 (2.5 V K) IBIS Model
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| Resource Name | Resource Type | Date | Format | Size |
|---|
Step 1: Configure SiT8209 Part Number
Step 2. Purchase
Quantity
| Qty: | Unit Price | Total |
|---|---|---|
| --- | --- | --- |
| Quantity | Unit Price | |
|---|---|---|
| 199 | --- | |
| 100-499 | --- | |
| 500-999 | --- | |
| 1,000-4,999 | --- | |
| > 4,999 | --- |